, l/ nc. 20 stern ave. springfield, new jersey 07081 u.s.a. n channel enhancement mode avalanche-rated telephone: (973) 376-2922 buz 80 pin1 pin 2 d pin 3 type buz 80 vds 800v id 3.1 a ^ds(on) 4q package to-220 ab maximum ratings parameter continuous drain current 7c = 28 c pulsed drain current tc = 25 c avalanche current, limited by tjmax avalanche energy, periodic limited by 7jmax avalanche energy, single pulse /d = 3.1 a, vdd = 50v, rgs = 25q l = 62.4 mh, 7j = 25 c gate source voltage power dissipation 7c = 25 c operating temperature storage temperature thermal resistance, chip case thermal resistance, chip to ambient din humidity category, din 40 040 iec climatic category, din iec 68-1 symbol id 'dpuls 'ar ar as vfes p[ol ti ^stg ^thjc ^thja values 3.1 12.5 3.1 8 320 20 100 -55... + 150 -55... + 150 <1.25 75 e 55/150/56 unit a mj v w c k/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
buz 80 electrical characteristics, at 71 = 25c, unless otherwise specified parameter symbol values min. typ. max. unit static characteristics drain- source breakdown voltage vqs = 0 v, /d = 0.25 ma, 7] = 25 c gate threshold voltage \ a ? \ ^ /?? ~ *1 m a vqq? ^ms 'd ? iii l/? zero gate voltage drain current vds = 800 v, vqs = 0 v, 7j = 25 c \/ds = 800 v, vgs = 0 v, 7j = 125 c gate-source leakage current vgs = 20 v, vds = 0 v drain-source on-resistance vgs = 10v, /d = 2a ^(br)dss ^gs(th) /dss 'gss ^ds(on) 800 2.1 - - - - - 3 0.1 10 10 3.5 - 4 1 100 100 4 v ua na o
buz 80 electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit dynamic characteristics transconductance vds> 2 * /d * f?ds(on)max, /d = 2 a input capacitance vgs = 0 v, vds = 25 v, f = 1 mhz output capacitance vgs = v- ^ds = 25 v- f= 1 mhz reverse transfer capacitance vgs ~ v- vds = 25 v, f = 1 mhz turn-on delay time vdd = 30 v, vgs = 10 v, /d = 3 a f?gs = 50 q rise time vdd = 30 v, vgs = 10 v, /d = 3 a /?gs = ^o 1 turn-off delay time vdd = 30 v, vgs = 10 v, /d = 3 a rgs = 50 q fall time vdd = 30 v, vgs = 10 v, /d = 3 a rgs = 50 q flte qss coss ^rss ^d(on) tf ^d(off) ff 1 - - - - - - - 3.6 900 95 50 15 65 200 65 - 1350 140 75 25 85 270 85 s pf ns
buz 80 electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit reverse diode inverse diode continuous forward current tc = 25 c inverse diode direct current.pulsed tc = 25 c inverse diode forward voltage vgs = 0 v, /f = 6.2 a reverse recovery time vr = 100 v, /f=/s, d/f/df = 100 a/us reverse recovery charge vr = 100 v, /f=/s, d/f/df = 100 a/us is /sm vsd 'rr qrr - - - - - - - 1 370 2.5 3.1 12.5 1.3 - - a v ns uc
|
